Samsung begins mass production of 512GB eUFS storage

Samsung starts cranking out 512GB eUFS storage

Samsung begins mass production of first 512 GB eUFS storage solution for mobile devices

Samsung says this is particularly noteworthy, given that its 512GB eUFS solution contains twice the number of cells as its 256GB eUFS solution. No precise timeline of when these chips can be expected in mobile devices has been disclosed, beyond it being meant for upcoming flagship smartphones and tablets.

Recently, we've seen Toshiba announce that it has started shipping UFS devices having 64-layer 3D flash storage.

"The new Samsung 512GB eUFS provides the best embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of microSD cards", said Jaesoo Han, executive vice president of Memory Sales & Marketing at Samsung Electronics. Entry-level Samsung flagship phones like the Galaxy S8 and Galaxy Note 8 come with 64GB of memory, but that might not be enough for some users. It cites an advanced circuit design and new power management technology used to minimize the energy consumed by this capacious storage device.

As for raw performance, Samsung's 512GB eUFS boasts sequential read and write speeds of up to 860MB/s and 255MB/s, respectively. In practical terms that means you could copy a "5GB-equivalent full HD video clip to an SSD in about six seconds, over eight times faster than a typical micro SD card".

Samsung starts cranking out 512GB eUFS storage

The Samsung 512GB eUFS also features strong read and write performance. In terms of IOPS, Samsung quotes reads of 42,000 IOPS and writes of 40,000 IOPS - hundreds of times faster than a conventional microSD card, says the South Korean tech giant. And the phones will be advanced enough to handle multiple demanding operations at once, such as downloading a video while also searching through big files in dual-app mode.

Another possible market is the imminent Microsoft/Qualcomm Windows-10-on-ARM laptops, which The Register understands will all-but-expect an LTE connection but will not be made worse by 512GB of power-sipping storage.

The technology behind this new flash storage solution is based on Samsung's current 48-layer 256 gigabit (Gb) V-NAND chips.

Our take: 512GB of UFS storage seems like a dream, but the question is: will OEMs release devices with such an incredibly high amount of internal storage?

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